Patents/Inventors

Sheng-huang Huang

HsinchuTW31 patents

28 Patents

US125818642026
Memory Device and Fabrication Method Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US125639752026
Magnetic Memory Device and Method for Manufacturing the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US125506192026
Techniques for MRAM MTJ Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US125435062026
Memory Device and Fabrication Method Thereof
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US124649552025
Magnetic Tunnel Junction Device and Method of Forming the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US124446502025
Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124262742025
Method for MRAM Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US124265142025
Techniques for MRAM MTJ Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US123427302025
Magnetic Tunnel Junction Structures with Protection Outer Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US123290392025
Magnetic Tunnel Junction Structures with Protection Outer Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites
US122848142025
Semiconductor Structure and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US122740722025
Semiconductor Memory Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US122741822025
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122741832025
Memory Cell with Top Electrode Via
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US122508262025
Integrated Circuit Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US122239892025
Semiconductor Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US121676142024
Techniques for MRAM MTJ Top Electrode to via Interface
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US120699632024
Magnetic Random Access Memory Device and Formation Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites
US120274202024
Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US119106192024
Method for MRAM Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118897692024
Memory Cell with Top Electrode Via
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118325292023
Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US118189622023
Sidewall Spacer Structure for Memory Cell
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites
US117232192023
Semiconductor Structure and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US116784932023
Semiconductor Structure and Manufacturing Method of the Same
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY Ltd.
0 cites
US116461672023
Keyboard Device and Key Structure Thereof
PRIMAX ELECTRONICS Ltd.
0 cites
US115694432023
Semiconductor Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites
US115517362023
Semiconductor Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites