11 Patents
- US125506192026Techniques for MRAM MTJ Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124446502025Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124262742025Method for MRAM Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US124265142025Techniques for MRAM MTJ Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US123427302025Magnetic Tunnel Junction Structures with Protection Outer Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US123290392025Magnetic Tunnel Junction Structures with Protection Outer Layers
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US122239892025Semiconductor Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites - US120699632024Magnetic Random Access Memory Device and Formation Method Thereof
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120274202024Etch Stop Layer for Memory Device Formation
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119106192024Method for MRAM Top Electrode Connection
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115517362023Semiconductor Device and Method for Fabricating the Same
TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.
0 cites