Shang-rong Li

5 Patents

• US124955792025

  Semiconductor Device with Leakage Current Suppression and Method of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING CO., Ltd.

  0 cites
• US124904642025

  Source/drain Features for Multi-gate Device and Method of Fabricating Thereof

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US122132972025

  Semiconductor Devices with Threshold Voltage Modulation Layer

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120876332024

  Multi-gate Field-effect Transistors and Methods of Forming the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites
• US120807802024

  Isolation Structures in Multi-gate Semiconductor Devices and Methods of Fabricating the Same

  TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.

  0 cites