55 Patents
- US125433472026Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US124648182025Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123763522025Integrated Circuit Devices Including a Vertical Field-effect Transistor and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - US123764052025Image Sensor with Trench Structures Filled with a Dielectric Pattern and Overlapped by a Light Shield Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - USD10845642025Combined Deodorizing, Sterilizing and Steaming Apparatus for Shoes Management
LG ELECTRONICS Inc.
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- US122439462025Integrated Circuit Devices Including a Common Gate Electrode and Methods of Forming the Same
Samsung Electronics Co., Ltd.
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- US121837382024Cross-coupled Gate Design for Stacked Device with Separated Top-down Gate
SAMSUNG ELECTRONICS CO., Ltd.
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- US121441632024Selective Double Diffusion Break Structures for Multi-stack Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US121293382024Thermosetting Resin Composition for Semiconductor Package, Prepreg and Metal Clad Laminate Using the Same
LG Chem, Ltd.
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- US120574482024Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US120516972024Integrated Circuit Devices Including Stacked Gate Structures with Different Dimensions
Samsung Electronics Co., Ltd.
0 cites - US120403272024Three-dimensional Semiconductor Device Having Vertical Misalignment
SAMSUNG ELECTRONICS CO., Ltd.
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- US119359222024Semiconductor Device Having Stepped Multi-stack Transistor Structure
SAMSUNG ELECTRONICS CO., Ltd.
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- US117355852023Stacked Semiconductor Device Having Mirror-symmetric Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116887422023Different Diffusion Break Structures for Three-dimensional Stacked Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
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- US116057082023Integrated Circuit Devices Including a Vertical Field-effect Transistor and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US115692322023Semiconductor Device Including Self-aligned Gate Structure and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites