Patents/Inventors

Seunggeol Nam

Suwon-siKR26 patents

24 Patents

US125686602026
Electronic Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US125385282026
Semiconductor Element and Multiplexer Including a Plurality of Semiconductor Elements
SEMES CO., Ltd.
0 cites
US124531062025
Capacitor Device and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US123827042025
Semiconductor Device and Electronic Apparatus Including the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US122179582025
Method of Pre-treating Substrate and Method of Directly Forming Graphene Using the Same
Samsung Electronics Co., Ltd.
0 cites
US122182172025
Layer Structure Including Dielectric Layer, Methods of Manufacturing the Layer Structure, and Electronic Device Including the Layer Structure
Samsung Electronics Co., Ltd.
0 cites
US122059512025
Complementary Metal Oxide Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US121991652025
Semiconductor Device and Electronic Apparatus Including the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US121398142024
Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (ULSAN NATIONAL INSTITUTE OF SCIENCE AND TECHNOLOGY)
0 cites
US121321092024
Ferroelectric Semiconductor Device and Method of Extracting Defect Density of the Same
Samsung Electronics Co., Ltd.
0 cites
US121190602024
Content-addressable Memory and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US121071402024
Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US120403602024
Semiconductor Device Including Metal-2 Dimensional Material-semiconductor Contact
Samsung Electronics Co., Ltd.
0 cites
US120275892024
Semiconductor Device Including Graphene and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US119961502024
Non-volatile Content Addressable Memory Device Having Simple Cell Configuration and Operating Method of the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US119845142024
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US119787982024
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US118045362023
Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites
US117990102023
Transistor Including Electride Electrode
Samsung Electronics Co., Ltd.
0 cites
US117641562023
Layer Structure Including Diffusion Barrier Layer and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US116997652023
Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites
US116769992023
Electronic Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US116241272023
Boron Nitride Layer, Apparatus Including the Same, and Method of Fabricating the Boron Nitride Layer
UNIST (Ulsan National Institute Of Science And Technology)
0 cites
US115722782023
Method of Forming Graphene
SAMSUNG ELECTRONICS CO., Ltd.
0 cites