Patents/Inventors

Seungchan Yun

Waterford, NYUS26 patents

22 Patents

US126157672026
Multi-stack Nanosheet Structure Including Semiconductor Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US126108072026
Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US125884892026
Integrated Circuit Devices Including Stacked Elements and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US125751472026
3d-stacked Transistor Structure with Barrier Layer Between Upper Gate Structure and Lower Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US125503752026
3d-stacked Semiconductor Device Including Gate Structure with RMG Inner Spacer Protecting Lower Work-function Metal Layer
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US124904912025
Integrated Circuit Devices Including a Back Side Power Distribution Network Structure and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US123566652025
Stacked Transistors Having an Isolation Region Therebetween and a Common Gate Electrode, and Related Fabrication Methods
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US123175882025
Step-stacked Nanowire CMOS Structure for Low Power Logic Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites
US123175822025
Integrated Circuit Devices Including a Metal Resistor and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122782852025
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US122496032025
Resistor Structures of Integrated Circuit Devices Including Stacked Transistors and Methods of Forming the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122439462025
Integrated Circuit Devices Including a Common Gate Electrode and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US122243362025
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US122118372025
Semiconductor Device Including Gate Contact Structure Formed from Gate Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121837862024
Multi-stack Semiconductor Device with Zebra Nanosheet Structure
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US121764172024
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US120948692024
Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US119359532024
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US117698302023
Semiconductor Devices
Samsung Electronics Co., Ltd.
0 cites
US117642072023
Diode Structures of Stacked Devices and Methods of Forming the Same
Samsung Electronics Co., Ltd.
0 cites
US116707012023
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites
US115631082023
Semiconductor Devices
SAMSUNG ELECTRONICS CO., Ltd.
0 cites