2 Patents
- US125936282026Silicon Precursor Having a Heterocyclic Group, Composition for Depositing a Silicon-containing Layer Comprising the Same and Method of Depositing a Silicon-containing Layer Using the Same
Samsung Electronics Co., Ltd.
0 cites - US125460012026Composition for Depositing a Silicon-containing Layer and Method of Depositing a Silicon-containing Layer Using the Same
DNF Co., Ltd
0 cites