48 Patents
- US126105842026Selective Growth of High-k Oxide on Channel of Gate-all-around Transistors
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- US125504012026Doped STI to Reduce Source/drain Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites - US125433512026Enriched Semiconductor Nanoribbons for Producing Intrinsic Compressive Strain
INTEL CORPORATION
0 cites - 0 cites
- 0 cites
- 0 cites
- US124330072025Transistor Gate Trench Engineering to Decrease Capacitance and Resistance
Intel Corporation
0 cites - US123494162025Transistor Structures with a Metal Oxide Contact Buffer and a Method of Fabricating the Transistor Structures
Intel Corporation
0 cites - US123494422025Thin Film Transistors Having Semiconductor Structures Integrated with 2D Channel Materials
Intel Corporation
0 cites - US123101012025Gate Dielectrics for Complementary Metal Oxide Semiconductors Transistors and Methods of Fabrication
Intel Corporation
0 cites - US122667122025Transition Metal Dichalcogenide Nanosheet Transistors and Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites
- 0 cites
- US121661222024Field-effect Transistor (FET) with Self-aligned Ferroelectric Capacitor and Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- US119800372024Memory Cells with Ferroelectric Capacitors Separate from Transistor Gate Stacks
Intel Corporation
0 cites - 0 cites
- US119233712024Voltage Regulator Circuit Including One or More Thin-film Transistors
Intel Corporation
0 cites - 0 cites
- 0 cites
- US118944652024Deep Gate-all-around Semiconductor Device Having Germanium or Group III-V Active Layer
Google LLC
0 cites - 0 cites
- 0 cites
- US118430582023Transistor Structures with a Metal Oxide Contact Buffer and a Method of Fabricating the Transistor Structures
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- US117697892023MFM Capacitor with Multilayered Oxides and Metals and Processes for Forming Such
Intel Corporation
0 cites - US117424072023Multilayer High-k Gate Dielectric for a High Performance Logic Transistor
Intel Corporation
0 cites - US117356702023Non-selective Epitaxial Source/drain Deposition to Reduce Dopant Diffusion for Germanium NMOS Transistors
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites
- 0 cites
- US116535022023Fefet with Embedded Conductive Sidewall Spacers and Process for Forming the Same
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites