10 Patents
- US125425452026High-sensitivity Delay Cells and Circuits of Detecting Threshold Voltage
UIF (University Industry Foundation), Yonsei University
0 cites - US124444582025Memory Cell Array of a Static Random Access Memory and a Static Random Access Memory Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124311932025Memory Device Using a Plurality of Supply Voltages and Operating Method Thereof
Industry-academic Cooperation Foundation, Yonsei University
0 cites - US123815932025Transmitter Circuit and Receiver Circuit of Interface Circuit and Operating Method Thereof
UIF (University Industry Foundation), Yonsei University
0 cites - US122779872025Error Handling Device, Semiconductor Memory Device Including the Same, and Error Handling Method Including Cross Sensing Operation
Industry-academic Cooperation Foundation Yonsei University
0 cites - US122315282025Apparatus for Correcting Error of Clock Signal
UIF (University Industry Foundation), Yonsei University
0 cites - US119901792024Memory Device Using a Plurality of Supply Voltages and Operating Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116703602023Integrated Circuit Including Cell Array with Word Line Assist Cells
Samsung Electronics Co., Ltd.
0 cites - US116368942023Integrated Circuit Including Cell Array with Write Assist Cell
Samsung Electronics Co., Ltd.
0 cites - US115689242023Static Random Access Memory (SRAM) Devices and Methods of Operating the Same
Industry Academic Cooperation Foundation, Yonsei University
0 cites