5 Patents
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- US124531722025Semiconductor Device Including Fin Field Effect Transistor with Separation Layer
Samsung Electronics Co., Ltd.
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- US122119412025Semiconductor Device with Channel Pattern Formed of Stacked Semiconductor Regions and Gate Electrode Parts
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116643792023Integrated Circuit Semiconductor Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites