8 Patents
- US126107472026Magnetic Tunneling Junction Device, Memory Device Including the Same, and Method of Manufacturing the Magnetic Tunneling Junction Device
Samsung Electronics Co., Ltd.
0 cites - US125637412026Magnetoresistive Random Access Memory Devices Having Efficient Unit Cell Layouts
Korea University Research And Business Foundation
0 cites - US124814352025Field Programmable Gate Array Device Including Spin Orbit Torque-magnetic Random Access Memory and Operating Method Thereof
Korea University Research And Business Foundation
0 cites - US123828392025Magnetic Tunneling Junction Device and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123102502025Magnetic Tunneling Junction Device and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121503872024Magnetic Tunneling Junction Device and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US120529302024Magnetic Tunneling Junction Device and Memory Device Including the Same
Samsung Electronics Co., Ltd.
0 cites