Patents/Inventors

Seong Yeol Mun

Santa Clara, CAUS17 patents

16 Patents

US122625622025
Image Sensor with Varying Depth Deep Trench Isolation Structure for Reduced Crosstalk
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US121071072024
Dark-current Inhibiting Image Sensor and Method
Omnivision Technologies, Inc.
0 cites
US120877922024
Suppressed Cross-talk Pixel-array Substrate and Fabrication Method
Omnivision Technologies, Inc.
0 cites
US119844642024
CMOS Image Sensor Having Front Side and Back Side Trench Isolation Structures Enclosing Pixel Regions and a Capacitor for Storing the Image Charge
Omnivision Technologies, Inc.
0 cites
US119013832024
Transistor Having Increased Effective Channel Width
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US118761102024
Sige Photodiode for Crosstalk Reduction
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US118699062024
Image Sensor with Elevated Floating Diffusion
Omnivision Technologies, Inc.
0 cites
US118625092024
Shallow Trench Isolation (STI) Structure for CMOS Image Sensor
Omnivision Technologies, Inc.
0 cites
US118109282023
CMOS Image Sensor with LED Flickering Reduction and Low Color Cross-talk
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US117054752023
Method of Forming Shallow Trench Isolation (STI) Structure for Suppressing Dark Current
Omnivision Technologies, Inc.
0 cites
US117004642023
Selective Nitrided Gate-oxide for RTS Noise and White-pixel Reduction
Omnivision Technologies, Inc.
0 cites
US116950302023
Reduced Cross-talk Pixel-array Substrate and Fabrication Method
Omnivision Technologies, Inc.
0 cites
US116473002023
Method for Forming LED Flickering Reduction (LFR) Film for HDR Image Sensor and Image Sensor Having Same
Omnivision Technologies, Inc.
0 cites
US116264332023
Transistors Having Increased Effective Channel Width
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US116160882023
Transistors Having Increased Effective Channel Width
OMNIVISION TECHNOLOGIES, Inc.
0 cites
US115576202023
Metal Grid Structure Integrated with Deep Trench Isolation Structure
Omnivision Technologies, Inc.
0 cites