6 Patents
- US125637752026Transistor Devices Having Buried Interconnection Line Below Source/drain Regions and One or More Protective Layers Covering Lower Surfaces of Gate Structures
SAMSUNG ELECTRONICS CO., Ltd.
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- US123826812025Multi-bridge Channel Field Effect Transistor with Reduced Gate-channel Leakage Current
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US123640072025Integrated Circuit Device Including Insulating Guide Film Between Adjacent Conductive Patterns
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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