26 Patents
- US126158182026Semiconductor Transistor Devices Including Alternatively Stacked Source/drain Regions
Samsung Electronics Co., Ltd.
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- US125573622026Semiconductor Device Including Source/drain Pattern with Varied Germanium Concentrations
SAMSUNG ELECTRONICS CO., Ltd.
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- US124777962025Semiconductor Device Including a Vertically Stacked Channel Pattern and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124713452025Semiconductor Device and Method for Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US124531482025Integrated Circuit Device Including Field-effect Transistor with Controlled Sizes and Configurations
Samsung Electronics Co., Ltd.
0 cites - US124263592025Semiconductor Device Including Source/drain Regions Having Triangular Tip Regions
SAMSUNG ELECTRONICS CO., Ltd.
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- US122565642025Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US122243572025Semiconductor Transistor Device Including Multiple Channel Layers with Different Materials
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118880282024Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US118626792024Semiconductor Device Having Increased Contact Area Between a Source/drain Pattern and an Active Contact
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US116996132023Semiconductor Devices and Methods of Fabricating the Same
Samsung Electronics Co., Ltd.
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