5 Patents
- US126069082026Substrate Processing System and Method of Manufacturing Semiconductor Device Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US125326732026Method of Forming PN Junction Including Transition Metal Dichalcogenide, Method of Fabricating Semiconductor Device Using the Same, and Semiconductor Device Fabricated by the Same
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US124826612025Semiconductor Device Having Deuterium Diffused Into the Substrate and Method of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US119011872024Semiconductor Device Including Hard Mask Structure with Repeating Spin-on Hard Mask Layers
Samsung Electronics Co., Ltd.
0 cites