Patents/Inventors

Seiyon Kim

Gyeonggi-doKR17 patents

16 Patents

US126081352026
Recovery Operation Applying a Recovery Voltage via Wake-up Pulse for Increasing a Residual Polarization of Memory Cells
SK Hynix Inc.
0 cites
US125139582025
Nanowire Transistor Fabrication with Hardmask Layers
Sony Group Corporation
0 cites
US124127822025
Semiconductor Device and Method for Fabricating the Same
SK Hynix Inc.
0 cites
US123639672025
Integration Methods to Fabricate Internal Spacers for Nanowire Devices
Sony Group Corporation
0 cites
US123100442025
Vertical Integration Scheme and Circuit Elements Architecture for Area Scaling of Semiconductor Devices
Intel Corporation
0 cites
US121426342024
Silicon and Silicon Germanium Nanowire Structures
Sony Group Corporation
0 cites
US121259162024
Nanowire Structures Having Non-discrete Source and Drain Regions
Google LLC
0 cites
US120466372024
Nanowire Transistor Fabrication with Hardmask Layers
Sony Group Corporation
0 cites
US118699392024
Integration Methods to Fabricate Internal Spacers for Nanowire Devices
Sony Group Corporation
0 cites
US117990292023
Multilayer Insulator Stack for Ferroelectric Transistor and Capacitor
Intel Corporation
0 cites
US117570262023
Nanowire Structures Having Wrap-around Contacts
Google LLC
0 cites
US117356522023
Field Effect Transistors Having Ferroelectric or Antiferroelectric Gate Dielectric Structure
Intel Corporation
0 cites
US117231882023
Replacement Metal COB Integration Process for Embedded DRAM
Intel Corporation
0 cites
US116770032023
Nanowire Transistor Fabrication with Hardmask Layers
Sony Group Corporation
0 cites
US115521802023
Antiferroelectric Perovskite Gate Oxide for Transistor Applications
Intel Corporation
0 cites
US115521972023
Nanowire Structures Having Non-discrete Source and Drain Regions
Google LLC
0 cites