Patents/Inventors

Sean T. Ma

Portland, ORUS25 patents

27 Patents

US125384702026
Structures and Methods for Memory Cells
Intel Corporation
0 cites
US123896292025
Source/drain Regions in Integrated Circuit Structures
Intel Corporation
0 cites
US123763532025
Source/drain Regions in Integrated Circuit Structures
Intel Corporation
0 cites
US123426142025
Asymmetric Gate Structures and Contacts for Stacked Transistors
Intel Corporation
0 cites
US123288642025
3D 1T1C Stacked Dram Structure and Method to Fabricate
Intel Corporation
0 cites
US123289362025
Gate Spacing in Integrated Circuit Structures
Intel Corporation
0 cites
US122888032025
Transistor with Isolation Below Source and Drain
Intel Corporation
0 cites
US122118982025
Device Contact Sizing in Integrated Circuit Structures
Intel Corporation
0 cites
US121913492025
Reducing Off-state Leakage in Semiconductor Devices
Intel Corporation
0 cites
US120683192024
High Performance Semiconductor Oxide Material Channel Regions for NMOS
Intel Corporation
0 cites
US119964472024
Field Effect Transistors with Gate Electrode Self-aligned to Semiconductor Fin
Intel Corporation
0 cites
US119844872024
Non-planar Transistor Arrangements with Asymmetric Gate Enclosures
Intel Corporation
0 cites
US119731212024
Device Contacts in Integrated Circuit Structures
Intel Corporation
0 cites
US119294352024
Ferroelectric Gate Stack for Band-to-band Tunneling Reduction
Intel Corporation
0 cites
US119234102024
Transistor with Isolation Below Source and Drain
Intel Corporation
0 cites
US119161062024
Source/drain Regions in Integrated Circuit Structures
Intel Corporation
0 cites
US118627302024
Top-gate Doped Thin Film Transistor
Intel Corporation
0 cites
US118495722023
3D 1T1C Stacked DRAM Structure and Method to Fabricate
Intel Corporation
0 cites
US117842392023
Subfin Leakage Suppression Using Fixed Charge
Intel Corporation
0 cites
US117642752023
Indium-containing Fin of a Transistor Device with an Indium-rich Core
Intel Corporation
0 cites
US117497152023
Isolation Regions in Integrated Circuit Structures
Intel Corporation
0 cites
US116706822023
FINFET Transistor Having a Doped Sub Fin Structure to Reduce Channel to Substrate Leakage
Tahoe Research, Ltd.
0 cites
US116721332023
Vertically Stacked Memory Elements with Air Gap
Intel Corporation
0 cites
US116580722023
Vertically Stacked Transistors in a Fin
Intel Corporation
0 cites
US116582222023
Thin Film Transistor with Charge Trap Layer
Intel Corporation
0 cites
US115692382023
Vertical Memory Cells
Intel Corporation
0 cites
US115576582023
Transistors with High Density Channel Semiconductor Over Dielectric Material
Intel Corporation
0 cites