5 Patents
- US122239932025Content Addressable Memory Based on Selfrectifying Ferroelectric Tunnel Junction Element
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
0 cites - US120873442024Ferroelectric FET Nonvolatile Sense-amplifier-based Flip-flop
UIF (University Industry Foundation), Yonsei University
0 cites - US119551552024Nonvolatile Memory Device and Latch Including the Same
UIF (UNIVERSITY INDUSTRY FOUNDATION), YONSEI UNIVERSITY
0 cites - US119551572024Physically Unclonable Function Apparatus Based on Ferroelectric Elements and Operation Method Thereof
INDUSTRY-ACADEMIC CORPORATION FOUNDATION, YONSEI UNIVERSITY
0 cites - US117909712023Ferroelectric Random Access Memory Device and Method for Operating Read and Write Thereof
INDUSTRY-ACADEMIC COOPERATION FOUNDATION, YONSEI UNIVERSITY
0 cites