Saurabh Roy

5 Patents

• US124713242025

  Power Semiconductor Device Having an Electrode with an Embedded Material

  Infineon Technologies Austria AG

  0 cites
• US121071282024

  Method of Producing a Semiconductor Device Having a Ferroelectric Gate Stack

  Infineon Technologies AG

  0 cites
• US120183872024

  Method for Fabricating a Semiconductor Device Using Wet Etching and Dry Etching and Semiconductor Device

  Infineon Technologies Austria AG

  0 cites
• US117913832023

  Semiconductor Device Having a Ferroelectric Gate Stack

  Infineon Technologies AG

  0 cites
• US117284272023

  Power Semiconductor Device Having a Strain-inducing Material Embedded in an Electrode

  Infineon Technologies Austria AG

  0 cites