13 Patents
- US125573222026Group Iii-nitride Transistors with Back Barrier Structures and Buried P-type Layers and Methods Thereof
Wolfspeed, Inc.
0 cites - US124842442025Group Iii-nitride High-electron Mobility Transistors with Gate Connected Buried P-type Layers and Process for Making the Same
Wolfspeed, Inc.
0 cites - US124777702025Group Iii-nitride High-electron Mobility Transistors with Buried P-type Layers and Process for Making the Same
Wolfspeed, Inc.
0 cites - US124262932025Group Iii-nitride Transistors with Back Barrier Structures and Buried P-type Layers and Methods Thereof
Wolfspeed, Inc.
0 cites - US124023462025Circuits and Group Iii-nitride Transistors with Buried P-layers and Controlled Gate Voltages and Methods Thereof
Wolfspeed, Inc.
0 cites - 0 cites
- US123241792025Group Iii-nitride High-electron Mobility Transistors with a Buried Metallic Conductive Material Layer and Process for Making the Same
Wolfspeed, Inc.
0 cites - US121426742024Gallium Nitride High-electron Mobility Transistors with P-type Layers and Process for Making the Same
WOLFSPEED, Inc.
0 cites - US120340722024Semiconductor Devices Having Unit Cell Transistors with Smoothed Turn-on Behavior and Improved Linearity
MACOM Technology Solutions Holdings, Inc.
0 cites - US118627192024Group Iii-nitride High-electron Mobility Transistors with Buried P-type Layers and Process for Making the Same
Wolfspeed, Inc.
0 cites - 0 cites
- US115946282023Monolithic Microwave Integrated Circuits Having Both Enhancement-mode and Depletion Mode Transistors
WOLFSPEED, Inc.
0 cites