44 Patents
- 0 cites
- US121486902024Microelectronic Devices Having Air Gap Structures Integrated with Interconnect for Reduced Parasitic Capacitances
Tahoe Research, Ltd.
0 cites - US121487572024Integration of Si-based Transistors with Non-si Technologies by Semiconductor Regrowth Over an Insulator Material
Intel Corporation
0 cites - US121258882024Group Iii-nitride (III-N) Devices with Reduced Contact Resistance and Their Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- US120340852024Variable Capacitance Device with Multiple Two-dimensional Electron Gas (2DEG) Layers
Intel Corporation
0 cites - US120276132024III-N Transistor Arrangements for Reducing Nonlinearity of Off-state Capacitance
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites
- US117990572023Group Iii-nitride Light Emitting Devices Including a Polarization Junction
Intel Corporation
0 cites - 0 cites
- 0 cites
- US117770222023Transistors Including First and Second Semiconductor Materials Between Source and Drain Regions and Methods of Manufacturing the Same
Intel Corporation
0 cites - US117570272023E-D Mode 2DEG FET with Gate Spacer to Locally Tune VT and Improve Breakdown
Intel Corporation
0 cites - US117283462023Group Iii-nitride (III-N) Devices with Reduced Contact Resistance and Their Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- 0 cites
- US117157992023Methods and Apparatus to Form Silicon-based Transistors on Group Iii-nitride Materials Using Aspect Ratio Trapping
Intel Corporation
0 cites - 0 cites
- 0 cites
- US116997042023Monolithic Integration of a Thin Film Transistor Over a Complimentary Transistor
INTEL CORPORATION
0 cites - 0 cites
- 0 cites
- 0 cites
- US116710752023Film Bulk Acoustic Resonator (FBAR) Devices for High Frequency RF Filters
Intel Corporation
0 cites - US116644172023III-N Metal-insulator-semiconductor Field Effect Transistors with Multiple Gate Dielectric Materials
Intel Corporation
0 cites - 0 cites
- US116521432023III-N Transistors Integrated with Thin-film Transistors Having Graded Dopant Concentrations And/or Composite Gate Dielectrics
Intel Corporation
0 cites - 0 cites
- 0 cites
- US116164882023FBAR Devices Having Multiple Epitaxial Layers Stacked on a Same Substrate
Intel Corporation
0 cites - US116108872023Side-by-side Integration of Iii-n Transistors and Thin-film Transistors
Intel Corporation
0 cites - US116109712023Cap Layer on a Polarization Layer to Preserve Channel Sheet Resistance
Intel Corporation
0 cites - US115878622023Microelectronic Devices Having Air Gap Structures Integrated with Interconnect for Reduced Parasitic Capacitances
Tahoe Research, Ltd.
0 cites - US115880372023Planar Transistors with Wrap-around Gates and Wrap-around Source and Drain Contacts
Intel Corporation
0 cites - US115813132023Integration of III-N Transistors and Non-iii-n Transistors by Semiconductor Regrowth
Intel Corporation
0 cites - US115750362023Gallium Nitride Transistors with Source and Drain Field Plates and Their Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- US115576672023Group Iii-nitride Devices with Improved RF Performance and Their Methods of Fabrication
Intel Corporation
0 cites - 0 cites
- 0 cites
- 0 cites