36 Patents
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- US124577922025Thin Film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123826442025Thin Film Structure Including Dielectric Material Layer and Electronic Device Employing the Same
Samsung Electronics Co., Ltd.
0 cites - US123693612025Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122836292025Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122605052025Method and Device for Providing Augmented Content Through Augmented Reality View on Basis of Preset Unit Space
NAVER Corporation
0 cites - US122540412025Position Recognition Method and System Based on Visual Information Processing
NAVER CORPORATION
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- US122243462025Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122102902025Optical Proximity Correction Method and Method of Fabricating a Semiconductor Device Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US121913112025Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
0 cites - US121764132024Ferroelectric Structure Including a Ferroelectric Film Having a First Net Polarization Oriented Toward a First Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121703362024Oxide Semiconductor Transistor, Method of Manufacturing the Same, and Memory Device Including Oxide Semiconductor Transistor
Samsung Electronics Co., Ltd.
0 cites - US121007492024Ferroelectric Thin-film Structures, Methods of Manufacturing the Same, and Electronic Devices Including the Ferroelectric Thin-film Structures
Samsung Electronics Co., Ltd.
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- US120449612024Method of Forming Mask Including Curvilinear Shape and Method of Forming Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - US119896462024Neuromorphic Apparatus Having 3D Stacked Synaptic Structure and Memory Device Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US119731422024Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US119000432024Electronic Device for Manufacturing Semiconductor Device and Operating Method of Electronic Device
Samsung Electronics Co., Ltd.
0 cites - US118879892024Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
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- US118241192023Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
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- US116463752023Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US116409802023Field-effect Transistor, Field-effect Transistor Array Structure and Method of Manufacturing Field-effect Transistor
Samsung Electronics Co., Ltd.
0 cites - US116049712023Neuromorphic Apparatus Having 3D Stacked Synaptic Structure and Memory Device Having the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116007122023Ferroelectric Structure Including a Ferroelectric Film Having a Net Polarization Oriented to a Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US115561602023Electronic Device for Adjusting Voltage and Operating Method Therefor
Samsung Electronics Co., Ltd.
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