22 Patents
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- US124904682025Semiconductor Device Including Single-crystalline Silicon Oxide Barrier Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US124531172025Source/drain Region of a Semiconductor Device Having an Oxygen Doped Barrier Layer Formed Between First and Second Epitaxial Layers
Samsung Electronics Co., Ltd.
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- US123957882025Apparatus and Method for Rendering an Audio Scene Using Valid Intermediate Diffraction Paths
Fraunhofer-gesellschaft Zur Foerderung Der Angewandten Forschung E.v.
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- US122782712025Semiconductor Device Having Capping Layers with Different Germanium Concentrations Over an Active Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US122680222025Semiconductor Device Including Air Gap Regions Below Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US122565642025Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
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- US120949752024Active Pattern Structure and Semiconductor Device Including the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
- US118876172024Electronic Device for Speech Recognition and Control Method Thereof
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118880282024Semiconductor Device Having a Liner Layer and Method of Fabricating the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118812132024Electronic Device, and Method for Controlling Electronic Device
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US117497542023Active Pattern Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites