6 Patents
- US124827022025Wet Etch Process and Methods to Form Air Gaps Between Metal Interconnects
Tokyo Electron Limited
0 cites - US122437492025Methods to Provide Uniform Wet Etching of Material Within High Aspect Ratio Features Provided on a Patterned Substrate
Tokyo Electron Limited
0 cites - US121486242024Wet Etch Process and Method to Control Fin Height and Channel Area in a Fin Field Effect Transistor (finfet)
Tokyo Electron Limited
0 cites - US121486252024Methods to Prevent Surface Charge Induced Cd-dependent Etching of Material Formed Within Features on a Patterned Substrate
Tokyo Electron Limited
0 cites - US121005982024Methods for Planarizing a Substrate Using a Combined Wet Etch and Chemical Mechanical Polishing (CMP) Process
Tokyo Electron Limited
0 cites - US121005992024Wet Etch Process and Method to Provide Uniform Etching of Material Formed Within Features Having Different Critical Dimension (CD)
Tokyo Electron Limited
0 cites