37 Patents
- 0 cites
- US124577922025Thin Film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US123826702025Thin Film Structure and Semiconductor Device Comprising the Same
Samsung Electronics Co., Ltd.
0 cites - US123693612025Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US122836292025Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US122667102025Thin Film Structure, Semiconductor Device Including the Same, and Semiconductor Apparatus Including Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US122243462025Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US121913112025Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
0 cites - US121764132024Ferroelectric Structure Including a Ferroelectric Film Having a First Net Polarization Oriented Toward a First Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121321092024Ferroelectric Semiconductor Device and Method of Extracting Defect Density of the Same
Samsung Electronics Co., Ltd.
0 cites - US121321332024Avalanche Photodetectors and Image Sensors Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121071402024Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US121007492024Ferroelectric Thin-film Structures, Methods of Manufacturing the Same, and Electronic Devices Including the Ferroelectric Thin-film Structures
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US119731422024Integrated Circuit Including Transistors and a Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118944692024Resonant Tunneling Devices Including Two-dimensional Semiconductor Materials and Methods of Detecting Physical Properties Using the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US118879892024Semiconductor Device Including Ferroelectric Material, Neuromorphic Circuit Including the Semiconductor Device, and Neuromorphic Computing Apparatus Including the Neuromorphic Circuit
Samsung Electronics Co., Ltd.
0 cites - US118880162024Image Sensor for High Photoelectric Conversion Efficiency and Low Dark Current
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - 0 cites
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- US118430372023Semiconductor Device and Method of Manufacturing the Semiconductor Device
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US118241192023Domain Switching Devices and Methods of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - US118045362023Thin Film Structure and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US117217812023Avalanche Photodetectors and Image Sensors Including the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
- US117017282023Logic Switching Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
0 cites - 0 cites
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- US116463752023Ferroelectric Thin-film Structure and Electronic Device Including the Same
Samsung Electronics Co., Ltd.
0 cites - US116264892023Optical Sensor and Image Sensor Including Graphene Quantum Dots
Samsung Electronics Co., Ltd.
0 cites - US116007122023Ferroelectric Structure Including a Ferroelectric Film Having a Net Polarization Oriented to a Polarization Enhancement Film and Semiconductor Device Including the Same
Samsung Electronics Co., Ltd.
0 cites