8 Patents
- 0 cites
- US125326732026Method of Forming PN Junction Including Transition Metal Dichalcogenide, Method of Fabricating Semiconductor Device Using the Same, and Semiconductor Device Fabricated by the Same
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
0 cites - US123896012025Three Dimensional Semiconductor Memory Device and Method for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US122565042025Holding System for Foldable Display Device and Foldable Display Set Including the Same
LG Display Co., Ltd.
0 cites - US122074652025Semiconductor Memory Device Including Vertical Insulating Pattern Including a Diffused Metal and Method of Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites - US121208832024Semiconductor Memory Device Using a Ferroelectric Characteristic of Charge Storage Layer and Operating Method Thereof
RESEARCH AND BUSINESS FOUNDATION SUNGKY
0 cites - US119250152024Vertical Memory Devices and Methods of Manufacturing the Same
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US119250232024Three Dimensional Semiconductor Memory Device and Method for Fabricating the Same
Samsung Electronics Co., Ltd.
0 cites