5 Patents
- US124647802025Nonvolatile Charge Trap Memory Device Having a High Dielectric Constant Blocking Region
LONGITUDE FLASH MEMORY SOLUTIONS Ltd.
0 cites - US122665212025Oxide-nitride-oxide Stack Having Multiple Oxynitride Layers
LONGITUDE FLASH MEMORY SOLUTIONS Ltd.
0 cites - US120094012024Memory Transistor with Multiple Charge Storing Layers and a High Work Function Gate Electrode
LONGITUDE FLASH MEMORY SOLUTIONS Ltd.
0 cites - US117842432023Oxide-nitride-oxide Stack Having Multiple Oxynitride Layers
LONGITUDE FLASH MEMORY SOLUTIONS Ltd
0 cites - US117217332023Memory Transistor with Multiple Charge Storing Layers and a High Work Function Gate Electrode
LONGITUDE FLASH MEMORY SOLUTIONS Ltd.
0 cites