13 Patents
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- US123241952025Multi-channel Field Effect Transistors with Enhanced Multi-layered Source/drain Regions
Samsung Electronics Co., Ltd.
0 cites - US122899082025Semiconductor Device Having Multi-bridge Channel Field-effect Transistor Including Source/drain Pattern with a Plurality of Semiconductor Patterns
SAMSUNG ELECTRONICS CO., Ltd.
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- US120275962024Semiconductor Device with Source/drain Pattern Including Buffer Layer
SAMSUNG ELECTRONICS CO., Ltd.
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- US116887782023Semiconductor Device Including Three-dimensional Field-effect Transistor with Curved Multi-layered Source/drain Pattern
SAMSUNG ELECTRONICS CO., Ltd.
0 cites - US116769632023Integrated Circuit Device and Method of Manufacturing the Same
Samsung Electronics Co., Ltd.
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