Patents/Inventors

Ryo Honna

TokyoJP1 patent

2 Patents

US123549142025
Method for Producing Substrate Having Through-silicon Vias, Substrate Having Through-silicon Vias, and Copper Paste for Through-silicon via Formation
Resonac Corporation
0 cites
US122029342025
Charge-transport Polymer and Organic Electronic Element
RESONAC CORPORATION
0 cites