6 Patents
- US125751702026Low Temperature, High Germanium, High Boron Sige:b Pepi with a Silicon Rich Capping Layer for Ultra-low PMOS Contact Resistivity and Thermal Stability
Intel Corporation
0 cites - US124396402025Reduced Contact Resistivity with PMOS Germanium and Silicon Doped with Boron Gate All Around Transistors
Intel Corporation
0 cites - US124263422025Low Germanium, High Boron Silicon Rich Capping Layer for PMOS Contact Resistance Thermal Stability
Intel Corporation
0 cites - US124143662025Co-integration of High Voltage (HV) and Low Voltage (LV) Transistor Structures, Using Channel Height and Spacing Modulation
Intel Corporation
0 cites - US121661242024Gate-all-around Integrated Circuit Structures Having Germanium-doped Nanoribbon Channel Structures
Intel Corporation
0 cites - 0 cites