Patents/Inventors

Ruqiang Bao

Niskayuna, NYUS29 patents

28 Patents

US125751452026
Monolithic Stacked Field Effect Transistor (SFET) with Dual Middle Dielectric Isolation (MDI) Separation
International Business Machines Corporation
0 cites
US125688062026
Conformal Dielectric Cap for Subtractive Vias
International Business Machines Corporation
0 cites
US124713552025
Non-overlapping Gate Conductors for GAA Transistors
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US124463062025
Stacked Field Effect Transistor Structure with Independent Gate Control Between Top and Bottom Gates
International Business Machines Corporation
0 cites
US124330202025
Multi-vt Solution for Replacement Metal Gate Bonded Stacked FET
International Business Machines Corporation
0 cites
US124024082025
Stacked FETS Including Devices with Thick Gate Oxide
International Business Machines Corporation
0 cites
US123175552025
Gate-all-around Nanosheet Field Effect Transistor Integrated with Fin Field Effect Transistor
International Business Machines Corporation
0 cites
US123100722025
Middle of Line Structure with Stacked Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US123101002025
Dielectric Reflow for Boundary Control
International Business Machines Corporation
0 cites
US122782372025
Stacked FETS with Non-shared Work Function Metals
International Business Machines Corporation
0 cites
US121762502024
Metal Gate Boundary for Transistor Scaling
International Business Machines Corporation
0 cites
US121763482024
Self-aligned Hybrid Substrate Stacked Gate-all-around Transistors
International Business Machines Corporation
0 cites
US121426362024
Sidewall Epitaxy Encapsulation for Nanosheet I/O Device
International Business Machines Corporation
0 cites
US121071682024
Independent Gate Length Tunability for Stacked Transistors
International Business Machines Corporation
0 cites
US120683872024
Multiple Threshold Voltage Scheme in Complementary Metal Oxide Semiconductor Transistors
International Business Machines Corporation
0 cites
US120340052024
Self-aligned Metal Gate with Poly Silicide for Vertical Transport Field-effect Transistors
International Business Machines Corporation
0 cites
US120150692024
Gate-all-around Field Effect Transistor Having Multiple Threshold Voltages
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US119618952024
Gate Stacks with Multiple High-κ Dielectric Layers
International Business Machines Corporation
0 cites
US119087432024
Planar Devices with Consistent Base Dielectric
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US118944232024
Contact Resistance Reduction in Nanosheet Device Structure
International Business Machines Corporation
0 cites
US118045222023
Sidewall Epitaxy Encapsulation for Nanosheet I/O Device
International Business Machines Corporation
0 cites
US117496802023
Multi-threshold Voltage Non-planar Complementary Metal-oxide-semiconductor Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US117497442023
Fin Structure for Vertical Transport Field Effect Transistor
International Business Machines Corporation
0 cites
US117355932023
Gate Stack Dipole Compensation for Threshold Voltage Definition in Transistors
International Business Machines Corporation
0 cites
US117105212023
Static Random-access Memory Cell Design
International Business Machines Corporation
0 cites
US116886352023
Oxygen-free Replacement Liner for Improved Transistor Performance
International Business Machines Corporation
0 cites
US116056342023
Multi-threshold Voltage Non-planar Complementary Metal-oxide-semiconductor Devices
INTERNATIONAL BUSINESS MACHINES CORPORATION
0 cites
US115691322023
Transistor Structure with N/P Boundary Buffer
International Business Machines Corporation
0 cites