Ruo Fang Zhang

3 Patents

• US124462172025

  3D NAND Memory Device and Method of Forming the Same

  YANGTZE MEMORY TECHNOLOGIES CO., Ltd.

  0 cites
• US118056432023

  Method of Fabrication Thereof a Multi-level Vertical Memory Device Including Inter-level Channel Connector

  Yangtze Memory Technologies Co., Ltd.

  0 cites
• US117372632023

  3D NAND Memory Device and Method of Forming the Same

  Yangtze Memory Technologies Co., Ltd.

  0 cites