12 Patents
- US124697982025Layout to Reduce Noise in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121764072024Method of Forming a Transistor Device with a Gate Structure Having a Pair of Recess Regions and a Resistive Protection Layer Within
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121321082024Dual Gate Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US120742082024Method of Making Triple Well Isolated Diode
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - US120275262024Breakdown Voltage Capability of High Voltage Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- US119234292024Plate Design to Decrease Noise in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118944592024Dual Gate Structures for Semiconductor Devices
Taiwan Semiconductor Manufacturing Co., Ltd.
0 cites - US118173962023Layout to Reduce Noise in Semiconductor Devices
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117698122023Semiconductor Device Having Multiple Wells and Method of Making
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites - 0 cites
- US116769972023High Voltage Resistor with High Voltage Junction Termination
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, Ltd.
0 cites