Rongfu Xiao

7 Patents

• US119570632024

  Magnetoresistive Element Having a Nano-current-channel Structure

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• US119107212024

  Perpendicular MTJ Element Having a Cube-textured Reference Layer and Methods of Making the Same

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• US118545892023

  STT-SOT Hybrid Magnetoresistive Element and Manufacture Thereof

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• US118057022023

  Methods of Forming Perpendicular Magnetoresistive Elements Using Sacrificial Layers

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• US116006602023

  Bottom-pinned Magnetic Random Access Memory Having a Composite SOT Structure

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• US115694402023

  Making a Memoristic Array with an Implanted Hard Mask

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• US115452902023

  Magnetoresistive Element Having a Giant Interfacial Perpendicular Magnetic Anisotropy

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