15 Patents
- US124127402025Semiconductor Device with a Porous Portion, Wafer Composite and Method of Manufacturing a Semiconductor Device
Infineon Technologies AG
0 cites - 0 cites
- US123026192025Silicon Carbide Components and Methods for Producing Silicon Carbide Components
Infineon Technologies AG
0 cites - US122727382025Methods of Forming Semiconductor Devices in a Layer of Epitaxial Silicon Carbide
Infineon Technologies AG
0 cites - US120275912024Method for Forming a Semiconductor Device and a Semiconductor Device
Infineon Technologies AG
0 cites - US118878942024Methods for Processing a Wide Band Gap Semiconductor Wafer Using a Support Layer and Methods for Forming a Plurality of Thin Wide Band Gap Semiconductor Wafers Using Support Layers
Infineon Technologies AG
0 cites - US118813972024Semiconductor Device with a Porous Portion, Wafer Composite and Method of Manufacturing a Semiconductor Device
Infineon Technologies AG
0 cites - US118814062024Method of Manufacturing a Semiconductor Device and Semiconductor Wafer
Infineon Technologies AG
0 cites - US118698402024Silicon Carbide Device and Method for Forming a Silicon Carbide Device
Infineon Technologies AG
0 cites - US118549262023Semiconductor Device with a Passivation Layer and Method for Producing Thereof
Infineon Technologies AG
0 cites - US117569172023Method for Processing a Semiconductor Wafer, Semiconductor Wafer, Clip and Semiconductor Device
Infineon Technologies Austria AG
0 cites - 0 cites
- US117215472023Method for Manufacturing a Silicon Carbide Substrate for an Electrical Silicon Carbide Device, a Silicon Carbide Substrate and an Electrical Silicon Carbide Device
Infineon Technologies AG
0 cites - US117127492023Parent Substrate, Wafer Composite and Methods of Manufacturing Crystalline Substrates and Semiconductor Devices
Infineon Technologies AG
0 cites - US117157682023Silicon Carbide Components and Methods for Producing Silicon Carbide Components
Infineon Technologies AG
0 cites