8 Patents
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- US121426412024Method for Making Gate-all-around (GAA) Device Including a Superlattice
ATOMERA INCORPORATED
0 cites - US121193802024Method for Making Semiconductor Device Including Superlattice with Oxygen and Carbon Monolayers
ATOMERA INCORPORATED
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- US118483562023Method for Making Semiconductor Device Including Superlattice with Oxygen and Carbon Monolayers
ATOMERA INCORPORATED
0 cites - US118376342023Semiconductor Device Including Superlattice with Oxygen and Carbon Monolayers
ATOMERA INCORPORATED
0 cites - US116644272023Vertical Semiconductor Device with Enhanced Contact Structure and Associated Methods
ATOMERA INCORPORATED
0 cites - US116644592023Method for Making an Inverted T Channel Field Effect Transistor (ITFET) Including a Superlattice
ATOMERA INCORPORATED
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