22 Patents
- 0 cites
- US125433792026Integrated Circuit Structure in Porous Semiconductor Region and Method to Form Same
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US123763852025Integrated Circuit Structures with Conductive Pathway Through Resistive Semiconductor Material
Globalfoundries U.S. Inc.
0 cites - US123566442025Gate Tunnel Current-triggered Semiconductor Controlled Rectifier
Globalfoundries U.S. Inc.
0 cites - 0 cites
- US122374072025Heterojunction Bipolar Transistor with Amorphous Semiconductor Regions
Globalfoundries U.S. Inc.
0 cites - US121913002025Integrated Circuit Structure with Resistive Semiconductor Material for Back Well
Globalfoundries U.S. Inc.
0 cites - 0 cites
- 0 cites
- US120683082024Integrated Circuit Structure with Avalanche Junction to Doped Semiconductor Over Semiconductor Well
Globalfoundries U.S. Inc.
0 cites - US120574442024Operating Voltage-triggered Semiconductor Controlled Rectifier
Globalfoundries U.S. Inc.
0 cites - US120275872024Electrostatic Discharge (ESD) Device with Improved Turn-on Voltage
GLOBALFOUNDRIES Singapore Pte. Ltd.
0 cites - 0 cites
- 0 cites
- US119554722024Semiconductor-controlled Rectifier with Low Trigger Voltage for Electrostatic Discharge Protection
Globalfoundries U.S. Inc.
0 cites - 0 cites
- 0 cites
- 0 cites
- 0 cites
- 0 cites
- US117283812023Electrostatic Discharge (ESD) Device with Improved Turn-on Voltage
GLOBALFOUNDRIES SINGAPORE PTE. Ltd.
0 cites