Patents/Inventors

Robert D. Clark

Fremont, CAUS18 patents

16 Patents

US125884342026
Methods for Forming Dielectric Materials with Selected Polarization for Semiconductor Devices
Tokyo Electron Limited
0 cites
US125884352026
Selective Inhibition for Selective Metal Deposition
Tokyo Electron Limited
0 cites
US125506962026
Patterning with Self-assembled Monolayer
Tokyo Electron Limited
0 cites
US125327192026
Barrier Schemes for Metallization Using Manganese and Graphene
TOKYO ELECTRON LIMITED
0 cites
US125001912025
Phase Change Interconnects and Methods for Forming the Same
Tokyo Electron Limited
0 cites
US124696962025
Method of Forming 3-dimensional Spacer
Tokyo Electron Limited
0 cites
US124216042025
Ultra-shallow Dopant and Ohmic Contact Regions by Solid State Diffusion
Tokyo Electron Limited
0 cites
US124068872025
Selective Film Formation Using a Self-assembled Monolayer
Tokyo Electron Limited
0 cites
US123623042025
Bonding Layer and Process of Making
Tokyo Electron Limited
0 cites
US122726012025
Epitaxial High-k Etch Stop Layer for Backside Reveal Integration
Tokyo Electron Limited
0 cites
US122612092025
Replacement Channel 2D Material Integration
Tokyo Electron Limited
0 cites
US122372162025
Method for Filling Recessed Features in Semiconductor Devices with a Low-resistivity Metal
Tokyo Electron Limited
0 cites
US122119072025
Semiconductor Manufacturing Platform with In-situ Electrical Bias and Methods Thereof
Tokyo Electron Limited
0 cites
US119787352024
Transistor Stack of Vertical Channel Ferroelectric Fets and Methods of Forming the Transistor Stack
Tokyo Electron Limited
0 cites
US119676402024
Crystalline Dielectric Systems for Interconnect Circuit Manufacturing
Tokyo Electron Limited
0 cites
US119425362024
Semiconductor Device Having Channel Structure with 2D Material
TOKYO ELECTRON LIMITED
0 cites