Ritesh Jhaveri

4 Patents

• US121319122024

  Advanced Etching Technologies for Straight, Tall and Uniform Fins Across Multiple Fin Pitch Structures

  Intel Corporation

  0 cites
• US120948812024

  Arsenic-doped Epitaxial Source/drain Regions for NMOS

  Intel Corporation

  0 cites
• US118759992024

  Advanced Etching Technologies for Straight, Tall and Uniform Fins Across Multiple Fin Pitch Structures

  Intel Corporation

  0 cites
• US116108892023

  Arsenic-doped Epitaxial, Source/drain Regions for NMOS

  Intel Corporation

  0 cites