2 Patents
- US124083962025Field-effect Transistors with Heterogenous Doped Regions in the Substrate of a Silicon-on-insulator Substrate
Globalfoundries U.S. Inc.
0 cites - US116521422023Lateral Bipolar Junction Transistors Having an Emitter Extension and a Halo Region
Globalfoundries U.S. Inc.
0 cites