Richard Ru-gin Chang

6 Patents

• US121487932024

  High Voltage Semiconductor Device Comprising a Combined Junction Terminal Protection Structure with a Ferroelectric Material

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US121366472024

  Super Junction Power Device and Method of Making the Same

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US120948732024

  Sige HBT with Graphene Extrinsic Base and Methods

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US118626742024

  High Voltage Semiconductor Device Comprising a Combined Junction Terminal Protection Structure with a Ferroelectric Material and Method of Making the Same

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US116770192023

  IGBT Device with Narrow Mesa and Manufacture Thereof

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites
• US115946312023

  LDMOS Transistor and Manufacture Thereof

  Sien (Qingdao) Integrated Circuits Co., Ltd.

  0 cites