11 Patents
- US125955842026Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US125037902025Systems and Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US124354402025Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant
Globalwafers Co., Ltd.
0 cites - 0 cites
- US120247892024Methods for Forming Single Crystal Silicon Ingots with Improved Resistivity Control
Globalwafers Co., Ltd.
0 cites - US119329622024Systems and Methods for Production of Silicon Using a Horizontal Magnetic Field
Globalwafers Co., Ltd.
0 cites - US118735742024Systems and Methods for Production of Silicon Using a Horizontal Magnetic Field
Globalwafers Co., Ltd.
0 cites - US118668442024Methods for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US117955692023Systems for Producing a Single Crystal Silicon Ingot Using a Vaporized Dopant
Globalwafers Co., Ltd.
0 cites - US117394372023Resistivity Stabilization Measurement of Fat Neck Slabs for High Resistivity and Ultra-high Resistivity Single Crystal Silicon Ingot Growth
Globalwafers Co., Ltd.
0 cites - US115850102023Methods for Producing a Single Crystal Silicon Ingot Using Boric Acid as a Dopant and Ingot Puller Apparatus That Use a Solid-phase Dopant
Globalwafers Co., Ltd.
0 cites