Patents/Inventors

Ravi Pillarisetty

Portland, ORUS44 patents

52 Patents

US125433492026
Transistors with Ferroelectric Gates
Intel Corporation
0 cites
US124715042025
Trench-based Quantum Dot Devices with Conductive Liners
Intel Corporation
0 cites
US123496042025
Technologies for Radio Frequency Optimized Interconnects for a Quantum Processor
Intel Corporation
0 cites
US123427332025
Quantum Dot Devices with Magnetic Gates
Intel Corporation
0 cites
US123289122025
Nanoribbon-based Quantum Dot Devices
Intel Corporation
0 cites
US123026432025
Backend Electrostatic Discharge Diode Apparatus and Method of Fabricating the Same
Intel Corporation
0 cites
US122666992025
Quantum Dot Array Devices with Shared Gates
Intel Corporation
0 cites
US122488482025
Scalable Gate Control in Quantum Circuit Assemblies
Intel Corporation
0 cites
US122455232025
Quantum Dot Devices with Fins
Intel Corporation
0 cites
US122306872025
Lateral Gate Material Arrangements for Quantum Dot Devices
Intel Corporation
0 cites
US122118412025
Quantum Dot Devices
Intel Corporation
0 cites
US121838312024
Self-aligned Contacts for Thin Film Transistors
Intel Corporation
0 cites
USRE0502222024
Non-planar Gate All-around Device and Method of Fabrication Thereof
Sony Group Corporation
0 cites
US120877502024
Stacked-substrate FPGA Semiconductor Devices
Intel Corporation
0 cites
US119905162024
Quantum Dot Devices with Independent Gate Control
Intel Corporation
0 cites
US119425162024
Quantum Dot Devices with Overlapping Gates
Intel Corporation
0 cites
US119358912024
Non-silicon N-type and P-type Stacked Transistors for Integrated Circuit Devices
Intel Corporation
0 cites
US119222742024
Quantum Dot Devices with Side and Center Screening Gates
Intel Corporation
0 cites
US119233712024
Voltage Regulator Circuit Including One or More Thin-film Transistors
Intel Corporation
0 cites
US119078082024
Apparatus and Method for Quantum Error Correction Without Measurement or Active Feedback
Intel Corporation
0 cites
US118944652024
Deep Gate-all-around Semiconductor Device Having Germanium or Group III-V Active Layer
Google LLC
0 cites
US118958242024
Vertical 1T-1C DRAM Array
Intel Corporation
0 cites
US118958462024
Double-gated Ferroelectric Field-effect Transistor
Intel Corporation
0 cites
US118698902024
Stacked Transistors with Contact Last
Intel Corporation
0 cites
US117642822023
Antiferroelectric Gate Dielectric Transistors and Their Methods of Fabrication
Intel Corporation
0 cites
US117497212023
Gate Walls for Quantum Dot Devices
Intel Corporation
0 cites
US117355952023
Thin Film Tunnel Field Effect Transistors Having Relatively Increased Width
Intel Corporation
0 cites
US117217242023
Quantum Well Stacks for Quantum Dot Devices
Intel Corporation
0 cites
US117217372023
Quantum Dot Devices with Trenched Substrates
Intel Corporation
0 cites
US117217662023
Metal-assisted Single Crystal Transistors
Intel Corporation
0 cites
US116997042023
Monolithic Integration of a Thin Film Transistor Over a Complimentary Transistor
INTEL CORPORATION
0 cites
US116997472023
Quantum Dot Devices with Multiple Layers of Gate Metal
Intel Corporation
0 cites
US117007762023
Quantum Dot Devices with Fins
Intel Corporation
0 cites
US116887352023
Quantum Dot Devices
Intel Corporation
0 cites
US116827012023
Quantum Dot Devices
Intel Corporation
0 cites
US116770172023
Quantum Well Stacks for Quantum Dot Devices
Intel Corporation
0 cites
US116644212023
Quantum Dot Devices
Intel Corporation
0 cites
US116582082023
Thin Film Transistors for High Voltage Applications
Intel Corporation
0 cites
US116582122023
Quantum Dot Devices with Conductive Liners
Intel Corporation
0 cites
US116597222023
Thin-film-transistor Based Complementary Metal-oxide-semiconductor (CMOS) Circuit
Intel Corporation
0 cites
US116526062023
Advanced Encryption Standard Semiconductor Devices Fabricated on a Stacked-substrate
Intel Corporation
0 cites
US116408392023
1S-1T Ferroelectric Memory
Intel Corporation
0 cites
US116409612023
III-V Source/drain in Top NMOS Transistors for Low Temperature Stacked Transistor Contacts
Intel Corporation
0 cites
US116160572023
IC Including Back-end-of-line (BEOL) Transistors with Crystalline Channel Material
Intel Corporation
0 cites
US116161262023
Quantum Dot Devices with Passive Barrier Elements in a Quantum Well Stack Between Metal Gates
Intel Corporation
0 cites
US116056712023
Double Selector Element for Low Voltage Bipolar Memory Devices
Intel Corporation
0 cites
US115945992023
Quantum Dot Array Devices
Intel Corporation
0 cites
US115750352023
Quantum Dot Devices with Top Gates
Intel Corporation
0 cites
US115692332023
Techniques and Mechanisms for Operation of Stacked Transistors
Intel Corporation
0 cites
US115692432023
Stacked-substrate DRAM Semiconductor Devices
Intel Corporation
0 cites
US115694282023
Superconducting Qubit Device Packages
Santa Clara
0 cites
US115576302023
Quantum Dot Devices with Selectors
Intel Corporation
0 cites