19 Patents
- 0 cites
- US124630372025Method of Manufacturing Ohmic Contacts on a Silicon Carbide (SIC) Substrate, Method of Manufacturing a Semiconductor Device, and Semiconductor Device
INFINEON TECHNOLOGIES AG
0 cites - US124263502025Semiconductor Device with Diode Chain Connected to Gate Metallization
Infineon Technologies AG
0 cites - 0 cites
- US124084102025Silicon Carbide Device with Stripe-shaped Gate Electrode and Source Metallization
INFINEON TECHNOLOGIES AG
0 cites - US122951562025Semiconductor Device Including Trench Gate Structure and Buried Shielding Region and Method of Manufacturing
INFINEON TECHNOLOGIES AG
0 cites - US120574732024Silicon Carbide Device with Transistor Cell and Clamp Regions in a Well Region
Infineon Technologies AG
0 cites - US119619042024Semiconductor Device Including Trench Gate Structure and Buried Shielding Region and Method of Manufacturing
INFINEON TECHNOLOGIES AG
0 cites - US118815122024Method of Manufacturing Semiconductor Device with Silicon Carbide Body
Infineon Technologies AG
0 cites - 0 cites
- US118698402024Silicon Carbide Device and Method for Forming a Silicon Carbide Device
Infineon Technologies AG
0 cites - US118551472023Method for Producing a Silicon Carbide Semiconductor Component
Infineon Technologies AG
0 cites - US118483792023MOSFET Having a Drift Region with a Graded Doping Profile and Methods of Manufacturing Thereof
Infineon Technologies Austria AG
0 cites - US117423912023Semiconductor Component Having a Diode Structure in a Sic Semiconductor Body
Infineon Technologies AG
0 cites - US117356332023Silicon Carbide Device with Trench Gate Structure and Method of Manufacturing
Infineon Technologies AG
0 cites - US116827032023Method of Producing a Semiconductor Device Having Spicular-shaped Field Plate Structures and a Current Spread Region
Infineon Technologies Austria AG
0 cites - US116706842023Semiconductor Transistor Device and Method of Manufacturing the Same
Infineon Technologies Austria AG
0 cites - US116264772023Silicon Carbide Field-effect Transistor Including Shielding Areas
Infineon Technologies AG
0 cites - US116007232023Transistor Device and Method of Fabricating a Gate of a Transistor Device
Infineon Technologies Austria AG
0 cites