3 Patents
- US125686462026Semiconductor Device with Trench Isolation Structures in a Transition Region and Method of Manufacturing
Infineon Technologies Austria AG
0 cites - US125573602026Lateral High Voltage Semiconductor Device and Method for Forming a Lateral High Voltage Semiconductor Device
Infineon Technologies Austria AG
0 cites - US124713082025Semiconductor-on-insulator Device with Lightly Doped Extension Region
Infineon Technologies Austria AG
0 cites