Patents/Inventors

Rajendran Krishnasamy

Essex Junction, VTUS44 patents

34 Patents

US126158032026
Transistor with a Primary Gate Wrapping a Floating Secondary Gate
Globalfoundries U.S. Inc.
0 cites
US126106052026
IC Structure with Gate Electrode Fully Within V-shaped Cavity
Globalfoundries U.S. Inc.
0 cites
US126045322026
Silicon Controlled Rectifiers
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125504102026
High Electron Mobility Transistors
GLOBALFOUNDRIES U.S. Inc.
0 cites
US125433792026
Integrated Circuit Structure in Porous Semiconductor Region and Method to Form Same
Globalfoundries U.S. Inc.
0 cites
US124890132025
Semiconductor-on-insulator Field-effect Transistors Including Stress-inducing Components
Globalfoundries U.S. Inc.
0 cites
US124713862025
Electrostatic Discharge Protection Devices
Globalfoundries U.S. Inc.
0 cites
US124578232025
Photodetector Structure with Air Gap and Related Methods
Globalfoundries U.S. Inc.
0 cites
US124329102025
Electrically Programmable Fuse Over Lateral Bipolar Transistor
Globalfoundries U.S. Inc.
0 cites
US124083662025
Protection Device Structures with a Discontinuous Isolation Well
Globalfoundries U.S. Inc.
0 cites
US124009272025
High-mobility-electron Transistors Having Heat Dissipating Structures
Globalfoundries U.S. Inc.
0 cites
US123880152025
E-fuse with Metal Fill
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123763852025
Integrated Circuit Structures with Conductive Pathway Through Resistive Semiconductor Material
Globalfoundries U.S. Inc.
0 cites
US123566442025
Gate Tunnel Current-triggered Semiconductor Controlled Rectifier
Globalfoundries U.S. Inc.
0 cites
US123495002025
Photodiode with Insulator Layer Along Intrinsic Region Sidewall
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123242482025
Electrostatic Discharge Device with Pinch Resistor
GLOBALFOUNDRIES U.S. Inc.
0 cites
US123101242025
Photodiodes
GLOBALFOUNDRIES U.S. Inc.
0 cites
US122939942025
Semiconductor Device Integration with an Amorphous Region
Globalfoundries U.S. Inc.
0 cites
US122782692025
Bipolar Transistor with Stepped Emitter
GLOBALFOUNDRIES U.S. Inc.
0 cites
US122374072025
Heterojunction Bipolar Transistor with Amorphous Semiconductor Regions
Globalfoundries U.S. Inc.
0 cites
US122306732025
Field-effect Transistors Having a Gate Electrode Positioned Inside a Substrate Recess
Globalfoundries U.S. Inc.
0 cites
US122059432025
Integrated Circuit Structure with Diode Over Lateral Bipolar Transistor
Globalfoundries U.S. Inc.
0 cites
US121913002025
Integrated Circuit Structure with Resistive Semiconductor Material for Back Well
Globalfoundries U.S. Inc.
0 cites
US121703292024
High Voltage MOSFET Device with Improved Breakdown Voltage
Globalfoundries U.S. Inc.
0 cites
US121703132024
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US121664762024
High Voltage Device with Linearizing Field Plate Configuration
Globalfoundries U.S. Inc.
0 cites
US121549562024
Structure Including Multi-level Field Plate and Method of Forming the Structure
Globalfoundries U.S. Inc.
0 cites
US119729992024
Unlanded Thermal Dissipation Pillar Adjacent Active Contact
Globalfoundries U.S. Inc.
0 cites
US119490342024
Photodetector with Dual Doped Semiconductor Material
GLOBALFOUNDRIES U.S. Inc.
0 cites
US118699412024
Vertical Bipolar Junction Transistor and Method
Globalfoundries U.S. Inc.
0 cites
US117770432023
Photodetectors with Substrate Extensions Adjacent Photodiodes
Globalfoundries U.S. Inc.
0 cites
US117217192023
Heterojunction Bipolar Transistor with Buried Trap Rich Isolation Region
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116644702023
Photodiode with Integrated, Self-aligned Light Focusing Element
GLOBALFOUNDRIES U.S. Inc.
0 cites
US116161272023
Symmetric Arrangement of Field Plates in Semiconductor Devices
Globalfoundries U.S. Inc.
0 cites