Rajaram Shetty

5 Patents

• US123984862025

  Method and System for Vertical Gradient Freeze 8 Inch Gallium Arsenide Substrates

  AXT, Inc.

  0 cites
• US123363192025

  Germanium Single-crystal Wafer, Method for Preparing Germanium Single-crystal Wafer, Method for Preparing Crystal Bar, and Use of Single-crystal Wafer

  BEIJING TONGMEI XTAL TECHNOLOGY CO., Ltd.

  0 cites
• US122760442025

  Low Etch Pit Density Gallium Arsenide Crystals with Boron Dopant

  AXT, Inc.

  0 cites
• US120847902024

  Low Etch Pit Density 6 Inch Semi-insulating Gallium Arsenide Wafers

  AXT, Inc.

  0 cites
• US116803402023

  Low Etch Pit Density 6 Inch Semi-insulating Gallium Arsenide Wafers

  AXT, Inc.

  0 cites