18 Patents
- US124531372025Ferroelectric Memory Devices Having Improved Ferroelectric Properties and Methods of Making the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US123241612025Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122740682025Method of Forming Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US122389322025Ferroelectric Memory Device, Manufacturing Method of the Ferroelectric Memory Device and Semiconductor Chip
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - 0 cites
- 0 cites
- US121549652024Carrier Barrier Layer for Tuning a Threshold Voltage of a Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121274112024Cocktail Layer Over Gate Dielectric Layer of FET Feram
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US121145072024Capping Layer Over FET Feram to Increase Charge Mobility
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US119178312024Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US118188962023Cocktail Layer Over Gate Dielectric Layer of FET Feram
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117789142023Organic Gate Tft-type Stress Sensors and Method of Making and Using the Same
Taiwan Semiconductor Manufacturing Company Limited
0 cites - US117698152023Carrier Barrier Layer for Tuning a Threshold Voltage of a Ferroelectric Memory Device
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117299902023Capping Layer Over FET Feram to Increase Charge Mobility
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US117069282023Memory Device and Method for Fabricating the Same
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116902282023Annealed Seed Layer to Improve Ferroelectric Properties of Memory Layer
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US116535012023Ferroelectric Memory Device, Manufacturing Method of the Ferroelectric Memory Device and Semiconductor Chip
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites - US115813342023Cocktail Layer Over Gate Dielectric Layer of FET Feram
Taiwan Semiconductor Manufacturing Company, Ltd.
0 cites