58 Patents
- US125987522026Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
Sandisk Technologies, Inc.
0 cites - US125882092026Three-dimensional Memory Device Containing Composite Word Lines Including a Respective Fluorine-free Capping Sublayer and Methods of Forming the Same
Sandisk Technologies, Inc.
0 cites - US125816522026Three-dimensional Memory Devices Having Channel Cap Structures and Methods for Forming the Same
Sandisk Technologies, Inc.
0 cites - US125816562026Three-dimensional Memory Device and Method of Making Thereof Using Etch Stop Structures Located Between Tiers
Sandisk Technologies, Inc.
0 cites - US125751002026Three-dimensional Memory Device Including Discrete Charge Storage Elements and Method of Making Thereof
Sandisk Technologies, Inc.
0 cites - 0 cites
- US124827512025Three-dimensional Memory Device Including Composite Backside Metal Fill Structures and Methods for Forming the Same
Sandisk Technologies, Inc.
0 cites - US124842222025Three-dimensional Memory Device and Method of Making Thereof by Non-conformal Selective Deposition of Insulating Spacers in a Memory Opening
Sandisk Technologies, Inc.
0 cites - US124577382025Three-dimensional Memory Device Containing Engineered Charge Storage Elements and Methods for Forming the Same
Sandisk Technologies, Inc.
0 cites - US124530882025Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods of Forming the Same
Sandisk Technologies, Inc.
0 cites - US124262672025Three-dimensional Memory Device and Method of Making Thereof Using Sacrificial Material Regrowth
Sandisk Technologies, Inc.
0 cites - US123879762025Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
Sandisk Technologies, Inc.
0 cites - US123762992025Three-dimensional Memory Device with Intermetallic Barrier Liner and Methods for Forming the Same
Sandisk Technologies, Inc.
0 cites - 0 cites
- US123639052025Memory Device Containing Composition-controlled Ferroelectric Memory Elements and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US123566272025Memory Device Containing Composition-controlled Ferroelectric Memory Elements and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US123477732025Three-dimensional Memory Device Containing Variable Thickness Word Lines with Reduced Length Metal Nitride Diffusion Barriers and Methods for Forming the Same
Sandisk Technologies, Inc.
0 cites - US123425372025Three-dimensional Memory Device Containing Epitaxial Pedestals and Top Source Contact
Sandisk Technologies, Inc.
0 cites - US123175022025Three-dimensional Memory Device Containing Ferroelectric-assisted Memory Elements and Method of Making the Same
Sandisk Technologies, Inc.
0 cites - US122898892025Three-dimensional Memory Device Containing Templated Crystalline Ferroelectric Memory Elements and Method of Making Thereof
Sandisk Technologies, Inc.
0 cites - US122679982025Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods of Forming the Same
Sandisk Technologies, Inc.
0 cites - US122610802025Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
Sandisk Technologies, Inc.
0 cites - US122552422025Three-dimensional Memory Device Including Vertical Stack of Tubular Graded Silicon Oxynitride Portions
Sandisk Technologies Inc.
0 cites - US122437762025Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
Sandisk Technologies, Inc.
0 cites - US122454342025Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
Sandisk Technologies, Inc.
0 cites - US122179652025Methods and Apparatuses for Forming Semiconductor Devices Containing Tungsten Layers Using a Tungsten Growth Suppressant
SANDISK TECHNOLOGIES LLC
0 cites - US122197762025Ferroelectric Devices Including a Single Crystalline Ferroelectric Layer and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US121762032024Methods and Apparatuses for Forming Semiconductor Devices Containing Tungsten Layers Using a Tungsten Growth Suppressant
SANDISK TECHNOLOGIES LLC
0 cites - US121609892024Three-dimensional Memory Device Including an Isolation-trench Etch Stop Layer and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US121503022024Memory Device Including Mixed Oxide Charge Trapping Materials and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US121441852024Method of Making Ovonic Threshold Switch Selectors Using Microwave Annealing
POHANG UNIVERSITY OF SCIENCE AND TECHNOLOGY
0 cites - US121375542024Three-dimensional Memory Device with Word-line Etch Stop Liners and Method of Making Thereof
SANDISK TECHNOLOGIES LLC
0 cites - US121375652024Three-dimensional Memory Device with Vertical Word Line Barrier and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US120966362024Semiconductor Device Containing Bit Lines Separated by Air Gaps and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US120876282024High Aspect Ratio via Fill Process Employing Selective Metal Deposition and Structures Formed by the Same
SANDISK TECHNOLOGIES LLC
0 cites - US120355352024Three-dimensional NOR Array Including Vertical Word Lines and Discrete Memory Elements and Methods of Manufacture
SANDISK TECHNOLOGIES LLC
0 cites - US120108412024Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
SANDISK TECHNOLOGIES LLC
0 cites - US119964622024Ferroelectric Field Effect Transistors Having Enhanced Memory Window and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119904132024Three-dimensional Memory Device Including Aluminum Alloy Word Lines and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119843952024Semiconductor Device Containing Bit Lines Separated by Air Gaps and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119729542024Method of Making a Three-dimensional Memory Device Using Composite Hard Masks for Formation of Deep via Openings
SANDISK TECHNOLOGIES LLC
0 cites - US119731232024Ferroelectric Devices Including a Single Crystalline Ferroelectric Layer and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119688262024Three-dimensional Memory Device with Metal-barrier-metal Word Lines and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US119688342024Three-dimensional Memory Device Including Discrete Charge Storage Elements with Laterally-protruding Profiles and Methods of Making Thereof
SANDISK TECHNOLOGIES LLC
0 cites - US119489022024Bonded Assembly Including an Airgap Containing Bonding-level Dielectric Layer and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - 0 cites
- US118774462024Three-dimensional Memory Device with Electrically Conductive Layers Containing Vertical Tubular Liners and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US117788172023Three-dimensional Memory Device Including III-V Compound Semiconductor Channel Layer and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US117497362023Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods for Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US117217272023Three-dimensional Memory Device Including a Silicon-germanium Source Contact Layer and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US116597112023Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US116316862023Three-dimensional Memory Array Including Dual Work Function Floating Gates and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US116316952023Three-dimensional Memory Device Containing Composite Word Lines Containing Metal and Silicide and Method of Making Thereof
SANDISK TECHNOLOGIES LLC
0 cites - US116316962023Three-dimensional Memory Device Including Discrete Charge Storage Elements and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US115944902023Three-dimensional Memory Device Including Molybdenum Carbide or Carbonitride Liners and Methods of Forming the Same
SANDISK TECHNOLOGIES LLC
0 cites - US115945532023Three-dimensional Ferroelectric Memory Device Containing Lattice-matched Templates and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US115692602023Three-dimensional Memory Device Including Discrete Memory Elements and Method of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites - US115455062023Ferroelectric Field Effect Transistors Having Enhanced Memory Window and Methods of Making the Same
SANDISK TECHNOLOGIES LLC
0 cites