25 Patents
- US125637652026Nitride-based Semiconductor Circuit and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US124449562025Nitride-based Bidirectional Switching Device for Battery Management and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US124263452025Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US124023822025Nitride-based Bidirectional Switching Device for Battery Management and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US122898992025Nitride-based Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US122899202025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US122439382025Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US122181282025Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US122182072025Method for Manufacturing Semiconductor Device
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121763432024Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US121661142024Semiconductor Device Structures and Methods of Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US121552452024Nitride-based Bidirectional Switching Device for Battery Management and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., Ltd.
0 cites - US121258442024Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120947132024Nitride-based Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120947142024Semiconductor Devices with Doped Semiconductor Materials
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US120877632024Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120741592024Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120626532024Nitride-based Semiconductor Bidirectional Switching Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US120403942024Semiconductor Device Having Improved Gate Leakage Current
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US119294062024Semiconductor Device and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118627222024Semiconductor Device Structures and Methods of Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118307862023Semiconductor Package and Method for Manufacturing the Same
INNOSCIENCE (SUZHOU) TECHNOLOGY CO., Ltd.
0 cites - US118174512023Semiconductor Device and Manufacturing Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117698262023Semiconductor Device with Asymmetric Gate Structure
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites - US117216922023Semiconductor Device and Fabrication Method Thereof
INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., Ltd.
0 cites